Description
100V High-Power Transistors
Place of Origin
Guangdong, China
Application
Power Switch Circuits
Supplier Type
original manufacturer
Cross Reference
TIP35C, TIP36C
Media Available
datasheet, Photo
Brand
High-Power Transistors
Current - Collector (Ic) (Max)
25A
Voltage - Collector Emitter Breakdown (Max)
100V
Vce Saturation (Max) @ Ib, Ic
0
Current - Collector Cutoff (Max)
25A
DC Current Gain (hFE) (Min) @ Ic, Vce
100V
Operating Temperature
-65-150
Mounting Type
Through Hole
Resistor - Emitter Base (R2)
0
FET Feature
Silicon Carbide (SiC)
Drain to Source Voltage (Vdss)
100V
Current - Continuous Drain (Id) @ 25°C
25A
Gate Charge (Qg) (Max) @ Vgs
0
Input Capacitance (Ciss) (Max) @ Vds
0
Current Rating (Amps)
25A
Drive Voltage (Max Rds On, Min Rds On)
100V
Configuration
Not Applicable
Voltage - Breakdown (V(BR)GSS)
100V
Current Drain (Id) - Max
25A
Voltage - Offset (Vt)
100V
Current - Gate to Anode Leakage (Igao)
25A
Current - Valley (Iv)
10A
Applications
power amplifier
Transistor Type
Transistor
