Place of Origin
Guangdong, China
Current - Collector (Ic) (Max)
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Voltage - Collector Emitter Breakdown (Max)
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Vce Saturation (Max) @ Ib, Ic
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Current - Collector Cutoff (Max)
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DC Current Gain (hFE) (Min) @ Ic, Vce
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Resistor - Emitter Base (R2)
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Drain to Source Voltage (Vdss)
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Current - Continuous Drain (Id) @ 25°C
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Gate Charge (Qg) (Max) @ Vgs
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Input Capacitance (Ciss) (Max) @ Vds
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Drive Voltage (Max Rds On, Min Rds On)
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Vce(on) (Max) @ Vge, Ic
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Input Capacitance (Cies) @ Vce
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Voltage - Breakdown (V(BR)GSS)
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Current - Drain (Idss) @ Vds (Vgs=0)
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Current Drain (Id) - Max
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Voltage - Cutoff (VGS off) @ Id
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Current - Gate to Anode Leakage (Igao)
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תיאור
5.1 v 0.5 mw 5% משטח הר SOD-123F סימון w8 דיודה bzt52c5v1
