Description
Insulated Gate Bipolar
Voltage - Collector Emitter Breakdown (max)
-
Vce Saturation (Max) @ Ib, Ic
-
DC Current Gain (hFE) (Min) @ Ic, Vce
-
Mounting Type
Through Hole
Resistor - Emitter Base (R2)
-
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
-
Current - Continuous Drain (Id) @ 25°C
-
Gate Charge (Qg) (Max) @ Vgs
-
Input Capacitance (Ciss) (Max) @ Vds
-
Drive Voltage (Max Rds On, Min Rds On)
-
IGBT Type
Insulated Gate Bipolar
Configuration
Single Switch
Input Capacitance (Cies) @ Vce
-
Voltage - Breakdown (V(BR)GSS)
-
Current - Drain (Idss) @ Vds (Vgs=0)
-
Current Drain (Id) - Max
-
Voltage - Cutoff (VGS off) @ Id
-
Current - Gate to Anode Leakage (Igao)
-
Transistor Type
Insulated Gate Bipolar
Mounting Type
Throught Hole