Place of Origin
Guangdong, China
Supplier Type
original manufacturer, agency, retailer, Other
Media Available
datasheet, Photo, EDA/CAD Models, Other
Current - Collector (Ic) (Max)
1
Voltage - Collector Emitter Breakdown (Max)
1
Vce Saturation (Max) @ Ib, Ic
1
Current - Collector Cutoff (Max)
1
DC Current Gain (hFE) (Min) @ Ic, Vce
1
Resistor - Emitter Base (R2)
1
FET Feature
Silicon Carbide (SiC)
Drain to Source Voltage (Vdss)
1
Current - Continuous Drain (Id) @ 25°C
1
Gate Charge (Qg) (Max) @ Vgs
1
Input Capacitance (Ciss) (Max) @ Vds
1
Drive Voltage (Max Rds On, Min Rds On)
1
Vce(on) (Max) @ Vge, Ic
1
Input Capacitance (Cies) @ Vce
1
Voltage - Breakdown (V(BR)GSS)
1
Current - Drain (Idss) @ Vds (Vgs=0)
1
Current Drain (Id) - Max
1
Voltage - Cutoff (VGS off) @ Id
1
Current - Gate to Anode Leakage (Igao)
1
